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D67DE-6

Description
Power Bipolar Transistor, 100A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size140KB,2 Pages
ManufacturerLoras Industries Inc.
Download Datasheet Parametric View All

D67DE-6 Overview

Power Bipolar Transistor, 100A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

D67DE-6 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PUFM-X4
Reach Compliance Codeunknown
Other featuresHIGH VOLTAGE
Shell connectionCOLLECTOR
Maximum collector current (IC)100 A
Collector-emitter maximum voltage600 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)25
Maximum landing time (tf)3000 ns
JESD-30 codeR-PUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment312.5 W
Maximum power dissipation(Abs)313 W
Certification statusNot Qualified
Maximum rise time (tr)1000 ns
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max3 V
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