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BCW29LT3

Description
100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size224KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BCW29LT3 Overview

100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

BCW29LT3 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment0.225 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
VCEsat-Max0.3 V
Base Number Matches1

BCW29LT3 Related Products

BCW29LT3 BCW30LT3
Description 100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-based maximum capacity 7 pF 7 pF
Collector-emitter maximum voltage 32 V 32 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 215
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Maximum power consumption environment 0.225 W 0.225 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
VCEsat-Max 0.3 V 0.3 V
Base Number Matches 1 1

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Index Files: 2781  1988  2927  660  1641  56  41  59  14  34 
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