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BFR93ALT1

Description
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236AB, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size55KB,2 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BFR93ALT1 Overview

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236AB, SOT-23, 3 PIN

BFR93ALT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSOT-23, 3 PIN
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.035 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment0.306 W
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3000 MHz
VCEsat-Max0.5 V
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BFR93ALT1/D
The RF Line
NPN Silicon
High-Frequency Transistors
Designed primarily for use in high–gain, low–noise, small–signal UHF and
microwave amplifiers constructed with thick and thin–film circuits using surface
mount components.
T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.
BFR93ALT1
RF TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C (2)
Derate linearly above Tcase = 75°C @
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Value
12
15
2.0
35
150
0.306
4.08
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
Symbol
Tstg
R
θJC
Max
– 55 to +150
245
Unit
°C
°C/W
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
DEVICE MARKING
BFR93ALT1 = R2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 10 mA)
Collector–Base Breakdown Voltage
(IC = 10
µA)
Emitter–Base Breakdown Voltage
(IC = 100
µA)
Collector Cutoff Current (VCE = 10 V)
Collector Cutoff Current (VCB = 10 V)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
12
15
2.0
50
50
Vdc
Vdc
Vdc
nA
nA
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 30 mA, VCE = 5.0 V)
Collector–Emitter Saturation Voltage (1)
(IC = 35 mA, IB = 7.0 mA)
Base–Emitter Saturation Voltage (1)
(IC = 35 mA, IB = 7.0 mA)
hFE
VCE(sat)
VBE(sat)
40
0.5
1.2
Vdc
Vdc
NOTES:
1. Pulse Width
300
µs,
Duty Cycle
2.0%.
2. Case temperature measured on collector lead immediately adjacent to body of package.
REV 7
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
BFR93ALT1
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