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HMBT4124

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size40KB,4 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
Download Datasheet Parametric View All

HMBT4124 Overview

Transistor

HMBT4124 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.2 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
surface mountYES
Nominal transition frequency (fT)300 MHz
Base Number Matches1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6859
Issued Date : 1998.02.01
Revised Date : 2004.09.08
Page No. : 1/4
HMBT4124
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT4124 is designed for general purpose switching and amplifier
applications.
SOT-23
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 30 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 25 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 5 V
I
C
Collector Current ........................................................................................................................................ 200 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
30
25
5
-
-
-
-
120
60
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
300
950
360
-
-
4
MHz
pF
Unit
V
V
V
nA
nA
mV
mV
I
C
=10uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=20V
V
EB
=3V
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=1V, I
C
=2mA
V
CE
=1V, I
C
=50mA
V
CE
=20V, I
C
=10mA, f=1MHz
V
CB
=5V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMBT4124
HSMC Product Specification

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