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HSB772S-E

Description
Small Signal Bipolar Transistor, 3A I(C), PNP
CategoryDiscrete semiconductor    The transistor   
File Size60KB,5 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
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HSB772S-E Overview

Small Signal Bipolar Transistor, 3A I(C), PNP

HSB772S-E Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.75 W
surface mountNO
Base Number Matches1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2004.08.13
Page No. : 1/5
HSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772S is designed for using in output stage of 0.75W amplifier, voltage
regulator, DC-DC converter and driver.
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature.......................................................................................................................... -55 to +150
°C
Junction Temperature................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)............................................................................................................... 750 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage .......................................................................................................................... -40 V
V
CEO
Collector to Emitter Voltage....................................................................................................................... -30 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ............................................................................................................................................. -3 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
-40
-30
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-1
-
160
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
400
-
-
MHz
pF
Unit
V
V
V
uA
uA
V
V
Test Conditions
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-2V, I
C
=-20mA
V
CE
=-2V, I
C
=-1A
V
CE
=-5V, I
C
=-0.1A, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
E
200-400
HSB772S
HSMC Product Specification

HSB772S-E Related Products

HSB772S-E HSB772S HSB772S-P HSB772S-Q
Description Small Signal Bipolar Transistor, 3A I(C), PNP Small Signal Bipolar Transistor Small Signal Bipolar Transistor, 3A I(C), PNP Small Signal Bipolar Transistor, 3A I(C), PNP
Reach Compliance Code unknown unknown unknown unknown
Base Number Matches 1 1 1 1
Maximum collector current (IC) 3 A - 3 A 3 A
Configuration Single - Single Single
Minimum DC current gain (hFE) 200 - 100 160
Maximum operating temperature 150 °C - 150 °C 150 °C
Polarity/channel type PNP - PNP PNP
Maximum power dissipation(Abs) 0.75 W - 0.75 W 0.75 W
surface mount NO - NO NO
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