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HSD965Q

Description
Small Signal Bipolar Transistor, 5A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size47KB,4 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
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HSD965Q Overview

Small Signal Bipolar Transistor, 5A I(C), NPN

HSD965Q Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)230
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.75 W
surface mountNO
Base Number Matches1
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6537
Issued Date : 1992.11.25
Revised Date : 2004.11.30
Page No. : 1/4
HSD965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD965 is suited for use as AF output amplifier and flash unit.
Absolute Maximum Ratings
TO-92
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ..................................................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 750 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 40 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................ 20 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 7 V
I
C
Collector Current (Continuous) .......................................................................................................................... 5 A
I
C
Collector Current (Peak P
T
=10mS) .................................................................................................................... 8 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE1
*h
FE2
f
T
Cob
Min.
40
20
7
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
-
0.1
0.1
1
800
-
-
50
MHz
pF
Unit
V
V
V
uA
uA
V
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=10V, I
E
=0
V
EB
=7V, I
C
=0
I
C
=3A, I
B
=100mA
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
V
CE
=6V, I
E
=50mA
V
CB
=20V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE
Rank
Range
Q
230-380
R
340-600
S
560-800
HSD965
HSMC Product Specification

HSD965Q Related Products

HSD965Q HSD965 HSD965S HSD965R
Description Small Signal Bipolar Transistor, 5A I(C), NPN Small Signal Bipolar Transistor Small Signal Bipolar Transistor, 5A I(C), NPN Small Signal Bipolar Transistor, 5A I(C), NPN
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 5 A - 5 A 5 A
Configuration Single - Single Single
Minimum DC current gain (hFE) 230 - 560 340
Maximum operating temperature 150 °C - 150 °C 150 °C
Polarity/channel type NPN - NPN NPN
Maximum power dissipation(Abs) 0.75 W - 0.75 W 0.75 W
surface mount NO - NO NO
Base Number Matches 1 1 1 -
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