MMFT960T3 datasheet, PDF - EEWORLD Datasheet

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MMFT960T3: Description300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA; CategoryDiscrete semiconductor The transistor; File Size122KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MMFT960T3 Overview

300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA

MMFT960T3 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.3 A
Maximum drain-source on-resistance	1.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-261AA
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	0.8 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMFT960T1/D

Medium Power Field Effect

Transistor

N–Channel Enhancement–Mode

Silicon Gate TMOS

SOT–223 for Surface Mount

This TMOS medium power field effect transistor is designed for

high speed, low loss power switching applications such as

switching regulators, dc–dc converters, solenoid and relay drivers.

The device is housed in the SOT–223 package which is designed

for medium power surface mount applications.

•

Silicon Gate for Fast Switching Speeds

•

RDS(on) = 1.7 Ohm Max

•

Low Drive Requirement

•

The SOT–223 Package can be soldered using wave or reflow.

The formed leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

•

Available in 12 mm Tape and Reel

Use MMFT960T1 to order the 7 inch/1000 unit reel

Use MMFT960T3 to order the 13 inch/4000 unit reel

GATE

3 SOURCE

2,4 DRAIN

MMFT960T1

Motorola Preferred Device

MEDIUM POWER

TMOS FET

300 mA

60 VOLTS

RDS(on) = 1.7 OHM MAX

CASE 318E–04, STYLE 3

TO–261AA

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Gate–to–Source Voltage — Non–Repetitive

Drain Current

Total Power Dissipation @ TA = 25°C(1)

Derate above 25°C

Operating and Storage Temperature Range

Symbol

VDS

VGS

TJ, Tstg

Value

300

0.8

6.4

– 65 to 150

Unit

Volts

mAdc

Watts

mW/°C

°C

DEVICE MARKING

FT960

THERMAL CHARACTERISTICS

Thermal Resistance — Junction–to–Ambient

Maximum Temperature for Soldering Purposes

Time in Solder Bath

θJA

156

260

°C/W

°C

Sec

1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.

TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

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