BFQ31R datasheet, PDF - EEWORLD Datasheet

BFQ31R: DescriptionRF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size57KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BFQ31R Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	1.7 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	600 MHz
Base Number Matches	1

	BFQ31R	BFQ31
Description	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Is it Rohs certified?	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A
Collector-based maximum capacity	1.7 pF	1.7 pF
Collector-emitter maximum voltage	15 V	15 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	175 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	600 MHz	600 MHz

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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