Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
| Parameter Name | Attribute value |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| Collector-based maximum capacity | 12 pF |
| Collector-emitter maximum voltage | 32 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JEDEC-95 code | TO-236AB |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
