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BUD43B-1

Description
2A, 350V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size120KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BUD43B-1 Overview

2A, 350V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN

BUD43B-1 Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Manufacturer packaging codeCASE 369-07
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)6
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)13 MHz
Maximum off time (toff)5800 ns
VCEsat-Max1 V
Base Number Matches1
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