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BUX12-JQR-BR1

Description
Power Bipolar Transistor, 20A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size14KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BUX12-JQR-BR1 Overview

Power Bipolar Transistor, 20A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

BUX12-JQR-BR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionTO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee1
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Base Number Matches1
BUX12
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
NPN MULTI - EPITAXIAL
POWER TRANSISTOR
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
22.23
(0.875)
max.
FEATURES
• HIGH CURRENT
• FAST SWITCHING
• HIGH RELIABILITY
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
TO–3
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg,
T
j
Collector – Base Voltage (I
E
= 0)
Collector – Emitter Voltage (V
BE
= –1.5V)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Peak Collector Current (t
p
= 10 ms)
Base Current
Total Power Dissipation at T
case
25°C
Storage Temperature
Junction Temperature
300V
300V
250V
7V
20A
25A
4A
150W
–65 to 200°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim.10/98

BUX12-JQR-BR1 Related Products

BUX12-JQR-BR1 BUX12-JQR-AR1 BUX12-QR-BR1 BUX12-JQRR1
Description Power Bipolar Transistor, 20A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 20A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 20A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 20A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it Rohs certified? conform to conform to conform to conform to
package instruction TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 20 A 20 A 20 A 20 A
Collector-emitter maximum voltage 250 V 250 V 250 V 250 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 10 10
JEDEC-95 code TO-3 TO-3 TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609 code e1 e1 e1 e1
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 8 MHz 8 MHz 8 MHz 8 MHz
Base Number Matches 1 1 1 -
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