BUW12A datasheet, PDF - EEWORLD Datasheet

BUW12A: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size67KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BUW12A Overview

Transistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	8 A
Configuration	Single
Minimum DC current gain (hFE)	10
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	125 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	BUW12A	2N6834	BUT51P	0734200670	BUT56A	MJH16004	BUX47A	MJ16016
Description	Transistor	Transistor	Power Bipolar Transistor, 15A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin	50 Ohms, SMP-MAX Plug Detent, Straight, Surface Mount, Tray	Transistor	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Transistor	Power Bipolar Transistor, 20A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	-	unknown	unknown	unknown	unknown
Maximum collector current (IC)	8 A	5 A	15 A	-	10 A	5 A	9 A	20 A
Configuration	Single	Single	DARLINGTON	-	Single	SINGLE	Single	SINGLE
Minimum DC current gain (hFE)	10	8	40	-	4	7	7	7
JESD-609 code	e0	e0	e0	-	e0	e0	e0	e0
Maximum operating temperature	150 °C	140 °C	150 °C	-	140 °C	-	200 °C	175 °C
Polarity/channel type	NPN	NPN	NPN	-	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	125 W	125 W	125 W	-	100 W	-	125 W	250 W
surface mount	NO	NO	NO	-	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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