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BFY50DWP

Description
Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH, G9, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size47KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

BFY50DWP Overview

Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH, G9, DIE-2

BFY50DWP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codeunknown
Collector-based maximum capacity12 pF
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-XUUC-N2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.2 V
Base Number Matches1
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