LAB
D PAK Package
Back of Case
Cathode
SEME
SML25EUZ06K
2
Enhanced Ultrafast Recovery Diode
600 Volt, 25 Amp
TECHNOLOGY
The planar passivated and enhanced ultrafast recovery
SML
25EUZ06K
diode features a triple charge control action utilising
Semelab’s Graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
1
2
BENEFITS
1- Cathode
2- Anode
l
l
l
l
Very fast recovery for low switching losses
Ultra soft recovery with low EMI generation
High dynamic ruggedness under all conditions
Low temperature dependency
Low on-state losses with positive temperature coefficient
Stable blocking voltage and low leakage current
Avalanche rated for high reliability circuit operation
1
2
l
l
l
See package outline for mechanical data and more details
Key Parameters
APPLICATIONS
V
R
V
F
I
F
t
rr
(max)
(typ)
(max)
(max)
600V
2.2V
25A
35ns
l
l
l
l
l
l
Freewheeling Diode for IGBTs and MOSFETs
Uninterruptible Power Supplies UPS
Switch Mode Power Supplies SMPS
Inverse and Clamping Diode
Snubber Diode
Fast Switching Rectification
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25°C unless otherwise stated)
V
RRM
V
R
I
FAV
I
FSM(surge)
I
FS(surge)
P
D
W
AVL
T
j
,T
STG
Peak Repetitive Reverse Voltage
DC Reverse Blocking Voltage
Average Forward Current @Tc = 85°C
Repetitive Forward Current
Non-Repetitive Forward Current (10msec pulse)
Power Dissipation @Tc = 85°C
Avalanche Energy (L=40mH)
Operating & Storage Junction Temperature
600V
600V
25
70A
250A
60W
20mJ
-55 to 150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim 8/00
LAB
ELECTRICAL & MECHANICAL CHARACTERISTICS
Parameter
Test Conditions
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
SEME
SML25EUZ06K
Min.
Typ.
2.2
2.3
1.85
0.6
0.4
TBD
0.43
20
43
0.62
24
52
35
Max.
2.5
Unit
STATIC ELECTRICAL CHARACTERISTICS
I
F
= 25A
V
Forward Voltage Drop
I
F
= 25A
F
I
F
= 15A
I
R
C
T
Leakage Current
Junction Capacitance
V
R
= 600V
V
R
= 600V
V
R
= 200V
V
200
2
µA
mA
pF
µC
A
nsec
µC
A
nsec
nsec
DYNAMIC ELECTRICAL CHARACTERISTICS
Q
rr
Reverse Recovery Charge
V
R
= 300V
Reverse Recovery Current
I
rr
di /dt = 800A/µs
Reverse Recovery Time
t
rr
Q
rr
I
rr
t
rr
t
rr
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Time
V
R
= 300V
di /dt = 800A/µs
V
R
= 50V
di /dt = 100A/µs
I
F
= 25A
T
j
= 25°C
I
F
= 25A
T
j
= 125°C
I
F
= 1A
T
j
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Junction to Case Thermal Resistance
R
θjc
R
θja
T
L
L
S
Junction to Ambient Thermal Resistance
Lead Temperature
Stray Inductance
10
TBD
1.4
300
°C/W
°C
nH
4.50
1.30
D PAK Package Outline
2
3-Cathode
9.2
15.3
2
2.54
2.40
0.10
1.5
4.9
0.80
2.54
5.08
0.80
2- Anode
1- Cathode
1
2
10.00
Dimensions in Millimeters
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
1.2
9.90
Prelim 8/00
Electronics Design Contest
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