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NE685M03

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size34KB,3 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

NE685M03 Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,

NE685M03 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.7 pF
Collector-emitter maximum voltage5 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)12000 MHz
Base Number Matches1
PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE685M03
FEATURES
NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 12 GHz
LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
TK
3
1.4 ±0.1
0.45
(0.9)
0.45
0.3±0.1
DESCRIPTION
The NE685M03 transistor is designed for low noise, high gain,
and low cost requirements. This high f
T
part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
1
0.2±0.1
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
µs,
duty cycle
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
µA
µA
pF
0.4
7
75
MIN
NE685M03
2SC5435
M03
TYP
12
1.5
9
140
0.1
0.1
0.7
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
California Eastern Laboratories

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