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SML1001R1HN-QR-B

Description
Power Field-Effect Transistor, 9.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size81KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

SML1001R1HN-QR-B Overview

Power Field-Effect Transistor, 9.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN

SML1001R1HN-QR-B Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)9.5 A
Maximum drain-source on-resistance1.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-258AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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