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D1017UKG4

Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, DM, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size210KB,6 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

D1017UKG4 Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, DM, 4 PIN

D1017UKG4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, CERAMIC, DM, 4 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage70 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
JESD-609 codee4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
TetraFET
D1017UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
C
1
2
D
E
4
M
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DM
PIN 1
PIN 3
SOURCE
SOURCE
PIN 2
PIN 4
DRAIN
GATE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17 Dia.
5.71
12.7 Dia.
6.60
0.13
4.32
3.17
26.16
Tol.
0.13
0.13
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia.
0.225
0.500 Dia.
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
220W
70V
±20V
30A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 6264
Issue 1

D1017UKG4 Related Products

D1017UKG4 D1017UK
Description RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, DM, 4 PIN RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DM, 4 PIN
Is it Rohs certified? conform to conform to
package instruction ROHS COMPLIANT, CERAMIC, DM, 4 PIN CERAMIC, DM, 4 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 70 V 70 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code O-CRFM-F4 O-CRFM-F4
JESD-609 code e4 e4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface GOLD GOLD
Terminal form FLAT FLAT
Terminal location RADIAL RADIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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