D2256UK datasheet, PDF - EEWORLD Datasheet

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D2256UK: DescriptionRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC4, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size33KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2256UK Overview

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC4, 8 PIN

D2256UK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	DBC4, 8 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	40 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	S-CDMW-F8
JESD-609 code	e4
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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TetraFET

D2256UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

B

E

D

8

1

7

6

3

4

2

C

R

A

F

5

Q

O

N

M

J

K

L

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

20W – 12.5V – 1GHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 10 dB MINIMUM

I

P

H

G

DBC4 Package

PIN 1 Source (Common) PIN 5 Source (Common)

PIN 2 Drain 1

PIN 3 Drain 2

PIN 6 Gate 2

PIN 7 Gate 1

PIN 4 Source (Common) PIN 8 Source (Common)

DIM

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

mm

6.47

0.76

45°

0.76

1.14

2.67

11.73

8.43

7.92

0.20

0.64

0.30

3.25

2.11

6.35SQ

1.65

0.13

0.25

Tol.

0.08

5°

0.08

0.13

0.08

0.02

0.08

0.51

max

0.07

Inches

.255

.030

45

°

.030

.045

.105

.462

.332

.312

.008

.025

.012

.128

.083

.250SQ

.065

.005

0.010

Tol.

.003

5°

.003

.005

.003

.001

.003

.020

max

.003

APPLICATIONS

•

VHF/UHF COMMUNICATIONS

from 1MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

P

D

BV

DSS

BV

GSS

I

D(sat)

T

stg

T

j

* Per Side

Semelab plc.

Power Dissipation

Drain – Source Breakdown Voltage *

Gate – Source Breakdown Voltage *

Drain Current *

Storage Temperature

Maximum Operating Junction Temperature

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

70W

40V

±20V

8A

–65 to 150°C

200°C

Document Number 3595

Issue 1

D2256UK Related Products

	D2256UK	D2256UKG4
Description	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC4, 8 PIN	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DBC4, 8 PIN
Is it Rohs certified?	conform to	conform to
package instruction	DBC4, 8 PIN	DBC4, 8 PIN
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Configuration	COMMON SOURCE, 2 ELEMENTS	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	40 V	40 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	S-CDMW-F8	S-CDMW-F8
JESD-609 code	e4	e4
Number of components	2	2
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE	SQUARE
Package form	MICROWAVE	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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