BLF6G20LS-140
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1930 to 1990
V
DS
(V)
28
P
L(AV)
(W)
35.5
G
p
(dB)
16.5
D
(%)
30
IMD3
(dBc)
37
[1]
ACPR
(dBc)
40
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 1000 mA:
Average output power = 35.5 W
Power gain = 16.5 dB (typ)
Efficiency = 30 %
IMD3 =
37
dBc
ACPR =
40
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1800 MHz to 2000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G20LS-140
Power LDMOS transistor
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphical symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G20LS-140 -
Description
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
39
+150
225
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 35 W
Typ
Unit
0.49 K/W
BLF6G20LS-140#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
2 of 9
BLF6G20LS-140
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 216 mA
V
DS
= 28 V;
I
D
= 1000 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 13 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10.8 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.56 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
1.53
-
31
-
9.7
-
-
Typ
-
2
2
-
39
-
13.5
0.07
3.57
Max
-
2.4
2.53
5
-
450
15
-
-
Unit
V
V
V
A
A
nA
S
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 1932.5 MHz; f
2
= 1942.5 MHz; f
3
= 1977.5 MHz; f
4
= 1987.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1000 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
P
L(AV)
G
p
RL
in
D
IMD3
ACPR
average output power
power gain
input return loss
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
P
L(AV)
= 35.5 W
P
L(AV)
= 35.5 W
P
L(AV)
= 35.5 W
P
L(AV)
= 35.5 W
P
L(AV)
= 35.5 W
Conditions
Min
-
15.5
-
27
-
-
Typ
35.5
16.5
8
30
37
40
Max
-
-
5
-
35
38
Unit
W
dB
dB
%
dBc
dBc
7.1 Ruggedness in class-AB operation
The BLF6G20LS-140 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1000 mA; P
L
= 140 W (CW); f = 1990 MHz.
BLF6G20LS-140#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
3 of 9
BLF6G20LS-140
Power LDMOS transistor
8. Test information
C20
V
GG
R2
C6
R1
C7
C2
C1
C4
C5
C9
C10
C3
C8
Q1
C16 C11 C12
C15 C13 C14
V
DD
L1
R3
001aah589
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
r
= 3.5
and thickness = 0.76 mm. See
Table 8
for list of components.
Fig 1.
Table 8.
C1
C2
C3
C4
C5
C6
C7
C8, C9
C10
C11, C12, C13, C14
C20
L1
Q1
R1
R2
R3
[1]
[2]
Component layout
List of components (see
Figure 1)
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
BLF6G20LS-140
SMD resistor
SMD resistor
SMD resistor
Value
0.5 pF
10 pF
0.9 pF
1.1 pF
1.4 pF
15 pF
10
F;
50 V
1.2 pF
13 pF
4.7
F;
50 V
220
F;
35 V
-
-
0
3.3 k
9.1
Ferroxcube BDS 3/3/8.9-4S2 or equivalent
[2]
[2]
[1]
[2]
[2]
[2]
[2]
[2]
Component
Remarks
TDK C5750X7R1H106M or equivalent
TDK C4532X7R1H475M or equivalent
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
BLF6G20LS-140#2
Product data sheet
Rev. 2 — 1 September 2015
4 of 9
BLF6G20LS-140
Power LDMOS transistor
9. Package outline
Earless flanged ceramic package; 2 leads
SOT502B
D
A
F
3
D1
D
U1
c
L
1
H
U2
E1
E
2
b
w2
M
D
M
Q
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
4.72
3.43
0.186
0.135
b
12.83
12.57
c
0.15
0.08
D
D1
E
9.50
9.30
E1
9.53
9.25
F
1.14
0.89
H
19.94
18.92
L
5.33
4.32
0.210
0.170
Q
1.70
1.45
U1
20.70
20.45
U2
9.91
9.65
w2
0.25
20.02 19.96
19.61 19.66
0.788 0.786
0.772 0.774
0.505 0.006
0.495 0.003
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.067 0.815
0.057 0.805
0.390
0.010
0.380
OUTLINE
VERSION
SOT502B
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
07-05-09
12-05-02
Fig 2.
Package outline SOT502B
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
BLF6G20LS-140#2
Product data sheet
Rev. 2 — 1 September 2015
5 of 9
Microcontroller MCU
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