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ZX5T853ZTA

Description
Power Bipolar Transistor, 4.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,6 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

ZX5T853ZTA Overview

Power Bipolar Transistor, 4.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN

ZX5T853ZTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSOT-89, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4.5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
ZX5T853Z
100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BV
CEO
= 100V : R
SAT
= 31m ; I
C
= 4.5A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 100V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
4.5 amps continuous current
Up to 10 amps peak current
Very low saturation voltages
SOT89
APPLICATIONS
Motor driving
Line switching
High side switches
Subscriber line interface cards (SLIC)
ORDERING INFORMATION
DEVICE
REEL
SIZE
7"
TAPE WIDTH
12mm
embossed
QUANTITY PER
REEL
1000 units
ZX5T853ZTA
PINOUT
DEVICE MARKING
853
VIEW
ISSUE 1 - DECEMBER 2004
1
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