ZXMHC6A07T8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel V
(BR)DSS
= 60V; R
DS(ON)
= 0.300 ; I
D
= 1.8A
P-Channel V
(BR)DSS
= -60V; R
DS(ON)
= 0.425 ; I
D
= -1.5A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
Low On - Resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SM8 package
SM8
S
1
G
1
S
4
G
4
D
1
, D
2
D
3
, D
4
APPLICATIONS
•
Motor drive
G
2
S
2
S
3
G
3
ORDERING INFORMATION
PINOUT DIAGRAM
DEVICE
ZXMHC6A07T8TA
ZXMHC6A07T8TC
REEL
SIZE
7
’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
DEVICE MARKING
•
ZXMH
C6A07
Top View
ISSUE 1 - JULY 2004
1
SEMICONDUCTORS
ZXMHC6A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=70 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
N-Channel
60
20
1.8
1.4
1.6
8.7
2.3
8.7
1.3
10.4
1.7
13.6
-55 to +150
P-Channel
-60
20
-1.5
-1.2
-1.3
-7.5
-2.1
-7.5
UNIT
V
V
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)(d)
Junction to Ambient
(b)(d)
SYMBOL
R
θJA
R
θJA
VALUE
96
73
UNIT
°C/W
°C/W
Notes
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t
≤
10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.2, pulse width 300 S pulse width limited by maximum junction temperature. Refer
to Transient Thermal Impedance graph.
(d) For device with one active die.
ISSUE 1 - JULY 2004
SEMICONDUCTORS
2
ZXMHC6A07T8
TYPICAL CHARACTERISTICS
ISSUE 1 - JULY 2004
3
SEMICONDUCTORS
ZXMHC6A07T8
N-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
60
1
100
1
3.0
0.300
0.450
2.3
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
V
GS
=10V, I
D
=1.8A
V
GS
=4.5V, I
D
=1.3A
V
DS
=15V,I
D
=1.8A
C
iss
C
oss
C
rss
166
19.5
8.7
pF
pF
pF
V
DS
=40V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
1.8
1.4
4.9
2.0
1.65
3.2
0.67
0.82
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=30V,V
GS
=10V,
I
D
=1.8A
V
DS
=30V,V
GS
=5V,
I
D
=1.8A
V
DD
=30V, I
D
=1.8A
R
G
≅6.0Ω,
V
GS
=10V
V
SD
t
rr
Q
rr
0.85
20.5
21.3
0.95
V
ns
nC
T
J
=25°C, I
S
=0.45A,
V
GS
=0V
T
J
=25°C, I
F
=1.8A,
di/dt= 100A/µs
ISSUE 1 - JULY 2004
SEMICONDUCTORS
4
ZXMHC6A07T8
P-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs.
Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
-60
-1
100
-1.0
0.425
0.630
1.8
V
A
nA
V
Ω
Ω
S
I
D
=-250µA, V
GS
=0V
V
DS
=-60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =-250µA, V
DS
= V
GS
D
V
GS
=-10V, I
D
=-0.9A
V
GS
=-4.5V, I
D
=-0.8A
V
DS
=-15V,I
D
=-0.9A
C
iss
C
oss
C
rss
233
17.4
9.6
pF
pF
pF
V
DS
=-30 V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
1.6
2.3
13
5.8
2.4
5.1
0.7
0.7
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-0.9A
V
DS
=-30V,V
GS
=-5V,
I
D
=-0.9A
V
DD
=-30V, I
D
=-1A
R
G
≅
6.0
Ω,
V
GS
=-10V
V
SD
t
rr
Q
rr
-0.85
22.6
23.2
-0.95
V
ns
nC
T
J
=25°C, I
S
=-0.8A,
V
GS
=0V
T
J
=25°C, I
F
=-0.9A,
di/dt= 100A/µs
ISSUE 1 - JULY 2004
5
SEMICONDUCTORS
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