ZXMC3AM832TC datasheet, PDF - EEWORLD Datasheet

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ZXMC3AM832TC: DescriptionSmall Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN; CategoryDiscrete semiconductor The transistor; File Size277KB，10 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZXMC3AM832TC Overview

Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN

ZXMC3AM832TC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	3 X 2 MM, MLP832, 10 PIN
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW THRESHOLD
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	3.7 A
Maximum drain current (ID)	2.9 A
Maximum drain-source on-resistance	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PQFP-F10
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	10
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	2.45 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	QUAD
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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ZXMC3AM832

MPPS™ Miniature Package Power Solutions

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

SUMMARY

N-Channel V

(BR)DSS

= 30V; R

DS(ON)

= 0.12 ; I

= 3.7A

P-Channel V

(BR)DSS

= -30V; R

DS(ON)

= 0.21 ; I

= -2.7A

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)

outline this dual 30V N channel Trench MOSFET utilizes a unique structure

combining the benefits of Low on-resistance with fast switching speed. This

makes them ideal for high efficiency, low voltage power management

applications. Users will also gain several other

key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

PCB area and device placement savings

Reduced component count

3mm x 2mm Dual Die MLP

FEATURES

•

Low on - resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

3mm x 2mm MLP

APPLICATIONS

•

MOSFET gate drive

•

LCD backlight inverters

•

Motor control

PINOUT

ORDERING INFORMATION

DEVICE

ZXMC3AM832TA

ZXMC3AM832TC

REEL

’‘

13’‘

TAPE

WIDTH

8mm

QUANTITY

PER REEL

3000 units

10000 units

3 x 2 Dual MLP

DEVICE MARKING

C01

underside view

PROVISIONAL ISSUE E - JULY 2004

ZXMC3AM832TC Related Products

	ZXMC3AM832TC	ZXMC3AM832TA
Description	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN
Is it Rohs certified?	conform to	conform to
package instruction	3 X 2 MM, MLP832, 10 PIN	3 X 2 MM, MLP832, 10 PIN
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW THRESHOLD	LOW THRESHOLD
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (Abs) (ID)	3.7 A	3.7 A
Maximum drain current (ID)	2.9 A	2.9 A
Maximum drain-source on-resistance	0.12 Ω	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PQFP-F10	R-PQFP-F10
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	10	10
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	2.45 W	2.45 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	FLAT	FLAT
Terminal location	QUAD	QUAD
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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