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UZXMC3AM832TA

Description
Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN
CategoryDiscrete semiconductor    The transistor   
File Size280KB,10 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

UZXMC3AM832TA Overview

Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN

UZXMC3AM832TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction3 X 2 MM, MLP832, 10 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW THRESHOLD
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)2.9 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PQFP-F10
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals10
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationQUAD
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
ZXMC3AM832
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
(BR)DSS
= 30V; R
DS(ON)
= 0.12 ; I
D
= 3.7A
P-Channel V
(BR)DSS
= -30V; R
DS(ON)
= 0.21 ; I
D
= -2.7A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
3mm x 2mm Dual Die MLP
FEATURES
Low on - resistance
Fast switching speed
Low threshold
Low gate drive
3mm x 2mm MLP
APPLICATIONS
MOSFET gate drive
LCD backlight inverters
Motor control
D2
PINOUT
5
D2
6
D1
7
D1
8
ORDERING INFORMATION
DEVICE
ZXMC3AM832TA
ZXMC3AM832TC
REEL
7
’‘
13’‘
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
G2
S2
G1
S1
4
3
2
1
3 x 2 Dual MLP
DEVICE MARKING
C01
underside view
PROVISIONAL ISSUE E - JULY 2004
1

UZXMC3AM832TA Related Products

UZXMC3AM832TA UZXMC3AM832TC
Description Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MLP832, 10 PIN
Is it Rohs certified? conform to conform to
package instruction 3 X 2 MM, MLP832, 10 PIN 3 X 2 MM, MLP832, 10 PIN
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOW THRESHOLD LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 2.9 A 2.9 A
Maximum drain-source on-resistance 0.12 Ω 0.12 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PQFP-F10 R-PQFP-F10
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 10 10
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form FLAT FLAT
Terminal location QUAD QUAD
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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