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UZXMN2A14FTC

Description
Small Signal Field-Effect Transistor, 3.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size201KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

UZXMN2A14FTC Overview

Small Signal Field-Effect Transistor, 3.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

UZXMN2A14FTC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)3.4 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
ZXMN2A14F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=20V : R
DS
(
on
)=0.06 ; I
D
=4.1A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
SOT23
APPLICATIONS
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN2A14FTA
ZXMN2A14FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
214
ISSUE 2 - SEPTEMBER 2003
1
SEMICONDUCTORS

UZXMN2A14FTC Related Products

UZXMN2A14FTC UZXMN2A14FTA
Description Small Signal Field-Effect Transistor, 3.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Small Signal Field-Effect Transistor, 3.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V
Maximum drain current (ID) 3.4 A 3.4 A
Maximum drain-source on-resistance 0.06 Ω 0.06 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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