Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt,
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | R-PDSO-G3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Minimum breakdown voltage | 25 V |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 5% |
| Minimum diode capacitance ratio | 5 |
| Nominal diode capacitance | 47 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Maximum power dissipation | 0.33 W |
| Certification status | Not Qualified |
| minimum quality factor | 200 |
| Maximum repetitive peak reverse voltage | 25 V |
| Maximum reverse current | 2e-8 µA |
| Reverse test voltage | 20 V |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| Varactor Diode Classification | HYPERABRUPT |
| Base Number Matches | 1 |
| ZC834B | ZDC833A | ZC835A | ZMV832A | ZMV833B | ZMV833A | ZMV835B | ZMV834B | ZMV835A | |
|---|---|---|---|---|---|---|---|---|---|
| Description | Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt, | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 25V, Silicon, | Variable Capacitance Diode, 68pF C(T), 25V, Silicon, Hyperabrupt, | Variable Capacitance Diode, 22pF C(T), 25V, Silicon, | Variable Capacitance Diode, 33pF C(T), 25V, Silicon, | Variable Capacitance Diode, 33pF C(T), 25V, Silicon, | Variable Capacitance Diode, 68pF C(T), 25V, Silicon, | Variable Capacitance Diode, 47pF C(T), 25V, Silicon, | Variable Capacitance Diode, 68pF C(T), 25V, Silicon, |
| Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
| Reach Compliance Code | compliant | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Minimum breakdown voltage | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V |
| Configuration | SINGLE | COMMON CATHODE, 2 ELEMENTS | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum diode capacitance ratio | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
| Nominal diode capacitance | 47 pF | 33 pF | 68 pF | 22 pF | 33 pF | 33 pF | 68 pF | 47 pF | 68 pF |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G2 | R-PDSO-G2 | R-PDSO-G2 | R-PDSO-G2 | R-PDSO-G2 | R-PDSO-G2 |
| JESD-609 code | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of components | 1 | 2 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 2 | 2 | 2 | 2 | 2 | 2 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| Maximum power dissipation | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W | 0.33 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| minimum quality factor | 200 | 200 | 100 | 200 | 200 | 200 | 100 | 200 | 100 |
| Maximum repetitive peak reverse voltage | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V |
| surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
| Diode Capacitance Tolerance | 5% | 10% | 10% | - | 5% | - | 5% | 5% | - |
| Maker | - | Zetex Semiconductors | - | - | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
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