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ZC835TA

Description
Variable Capacitance Diode, 68pF C(T), 25V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

ZC835TA Overview

Variable Capacitance Diode, 68pF C(T), 25V, Silicon, Hyperabrupt

ZC835TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio5
Nominal diode capacitance68 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor100
Maximum reverse current0.02 µA
Reverse test voltage20 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
predict
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