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SML10SIC03YC-QR-B

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon Carbide, TO-257AA, HERMETIC SEALED PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size149KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
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SML10SIC03YC-QR-B Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon Carbide, TO-257AA, HERMETIC SEALED PACKAGE-3

SML10SIC03YC-QR-B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionHERMETIC SEALED PACKAGE-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON CARBIDE
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-257AA
JESD-30 codeS-MSFM-P3
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
surface mountNO
technologySCHOTTKY
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SML10SIC03YC
TO257AA PACKAGE
SiC SCHOTTKY DIODE
V
R
300V
I
F
2x10A
Semelab’s Silicon Carbide (SiC) Schottky
diodes exhibit low forward voltage, zero
reverse recovery, and superb high-
temperature performance.
The devices employ Semelab’s proven
hermetic packaging technology and are
suitable
for
high-frequency
hard-
switching applications, where system
efficiency and reliability are paramount.
case
1
2
3
ABSOLUTE MAXIMUM RATINGS
at T
J
= 25°C unless otherwise stated (per leg)
Symbol
V
R
V
RRM
V
RSM
I
F
I
FRM
I
FSM
P
D
T
J
, T
stg
Parameter
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Forward Current T
C
= 100°
C
Repetitive Peak Forward Current T
J
= 150° T
C
= 100° D = 0.1
C,
C,
Surge Peak Forward Current T
C
= 25° tp = 10 s
C,
Power Dissipation T
C
= 25°C
Operating Junction and Storage Temperature
Rating
300
300
300
10
45
100
65W
-55 to +175
Units
V
V
V
A
A
A
W
°
C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by
Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or
omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5351
Issue 1

SML10SIC03YC-QR-B Related Products

SML10SIC03YC-QR-B
Description Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon Carbide, TO-257AA, HERMETIC SEALED PACKAGE-3
Is it Rohs certified? incompatible
package instruction HERMETIC SEALED PACKAGE-3
Reach Compliance Code compliant
ECCN code EAR99
Other features HIGH RELIABILITY
application EFFICIENCY
Shell connection CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON CARBIDE
Diode type RECTIFIER DIODE
JEDEC-95 code TO-257AA
JESD-30 code S-MSFM-P3
Maximum non-repetitive peak forward current 100 A
Number of components 2
Phase 1
Number of terminals 3
Maximum operating temperature 175 °C
Minimum operating temperature -55 °C
Maximum output current 10 A
Package body material METAL
Package shape SQUARE
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Certification status Not Qualified
Maximum repetitive peak reverse voltage 300 V
surface mount NO
technology SCHOTTKY
Terminal form PIN/PEG
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
Base Number Matches 1

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