Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, STA, 8 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | STA, 8 PIN |
| Contacts | 8 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 100 V |
| Configuration | COMPLEX |
| Minimum DC current gain (hFE) | 1000 |
| JESD-30 code | R-PSIP-T8 |
| JESD-609 code | e0 |
| Number of components | 3 |
| Number of terminals | 8 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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