SMA4032 datasheet, PDF - EEWORLD Datasheet

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SMA4032: DescriptionPower Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA, 12 PIN; CategoryDiscrete semiconductor The transistor; File Size23KB，1 Pages; ManufacturerAllegro; Websitehttp://www.allegromicro.com/

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SMA4032 Overview

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA, 12 PIN

SMA4032 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMA, 12 PIN
Contacts	12
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	100 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PSIP-T12
JESD-609 code	e0
Number of components	4
Number of terminals	12
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
Base Number Matches	1

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SLA4031

Absolute maximum ratings

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

F

I

FSM

V

R

P

T

V

ISO

T

j

T

stg

θ

j-c

Specification

120

6

4

6 (PW≤1ms, D

u

≤50%)

0.5

4 (PW≤0.5ms, D

u

≤25%)

6 (PW≤10ms, Single)

120

5 (T

a

=25°C)

25 (T

c

=25°C)

1000 (Between fin and lead pin, AC)

150

–40 to +150

5

NPN Darlington

With built-in flywheel diode

(T

a

=25°C)

External dimensions

A

•••

SLA

Electrical characteristics

Symbol

I

CBO

I

EBO

V

CEO

h

FE

V

CE

(sat)

V

BE

(sat)

t

on

t

stg

t

f

120

2000

min

Specification

typ

max

10

5000

1.0

1.6

0.6

5.0

2.0

15000

1.5

2.0

Unit

(T

a

=25°C)

Unit

V

A

V

W

V

rms

°C

°C/W

Conditions

V

CB

=120V

V

EB

=6V

I

C

=25mA

V

CE

=2V, I

C

=2A

I

C

=2A, I

B

=2mA

V

CC

40V,

I

C

=2A,

I

B1

=–I

B2

=10mA

(T

a

=25°C)

µ

A

mA

V

µ

s

µ

s

µ

s

sDiode

for flyback voltage absorption

Symbol

V

R

V

F

I

R

t

rr

min

120

1.2

10

100

Specification

typ

max

Unit

V

µ

A

ns

Conditions

I

R

=10

µ

A

I

F

=1A

V

R

=120V

I

F

=±100mA

sEquivalent

circuit diagram

2

3

4

9

10 11

1

R

1

R

2

5

8

12

6

7

R

1

: 3kΩ typ R

2

: 500Ω typ

Characteristic curves

I

C

-V

CE

Characteristics (Typical)

4

0.8m

I

B

=

1m

A

h

FE

-I

C

Characteristics (Typical)

20000

h

FE

-I

C

Temperature Characteristics (Typical)

20000

10000

(V

CE

=2V)

(V

CE

=2V)

A

0.6mA

10000

typ

3

0.5mA

5000

25

°

C

0.4mA

I

C

(A)

T

a

=1

h

FE

2

0.3mA

h

FE

1000

500

1000

500

°

C

75

°

C

25

C

0

°

–3

1

100

50

100

50

20

0.02

0

1

2

3

4

5

20

0.02

0.05

0.1

0.5

1

4

0.05

0.1

0.5

1

4

V

CE

(V)

I

C

(A)

I

C

(A)

V

CE

(sat)-I

C

Temperature Characteristics (Typical)

3

V

CE

(sat)-I

B

Characteristics (Typical)

3

I

C

-V

BE

Temperature Characteristics (Typical)

4

(I

C

/ I

B

=500)

(V

CE

=2V)

V

CE

(sat) (V)

V

CE

(sat) (V)

T

a

=1

2

25

°

C

75

°

C

25

°

C

3

2

I

C

=4A

I

C

=2A

I

C

(A)

C

0

°

–3

2

1

I

C

=1A

T

a

=

125

°

75

°

C

1

0

0.3

0.5

1

5

0

0.1

0.5

1

5

10

50

0

1

25

°C

–30°C

2

3

I

C

(A)

I

B

(mA)

V

BE

(V)

θ

j-a

-PW Characteristics

20

25

P

T

-T

a

Characteristics

10

With Silicone Grease

Natural Cooling

Heatsink: Aluminum

in mm

W

Safe Operating Area (SOA)

5

1m

s

0

10

µ

s

20

θ

j–a (°C / W)

10

ms

ith

5

P

T

(W)

15

10

50

×

0

×

1

00

×

2

1

5

Without Heatsink

50

×

2

I

C

(A)

150

ini

Inf

te

He

ats

ink

1

0.5

0.1

Single Pulse

0.05

Without Heatsink

0.5

1

5

10

50 100

500 1000

0

–40

0

50

100

0.03

3

T

a

=25°C

5

10

50

100

200

PW (mS)

T

a

(°C)

V

CE

(V)

20

SMA4032 Related Products

	SMA4032	SMA4033	SLA4041	SLA4071
Description	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA, 12 PIN	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SMA-12	Power Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SLA, 12 PIN	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 4-Element, PNP, Silicon, Plastic/Epoxy, 12 Pin, SIP-12
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	SMA, 12 PIN	SMA-12	SLA, 12 PIN	SIP-12
Contacts	12	12	12	12
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	3 A	2 A	3 A	5 A
Collector-emitter maximum voltage	100 V	100 V	200 V	100 V
Configuration	COMPLEX	COMPLEX	COMPLEX	COMPLEX
Minimum DC current gain (hFE)	2000	2000	1000	2000
JESD-30 code	R-PSIP-T12	R-PSIP-T12	R-PSFM-T12	R-PSFM-T12
JESD-609 code	e0	e0	e0	e0
Number of components	4	4	4	4
Number of terminals	12	12	12	12
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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