SM8S Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive Transient Voltage Suppressors
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
ed*
ent
Pat
0.413(10.5)
0.374(9.5)
Stand-off Voltage
10 to 36V
Peak Pulse Power
6600W (10/1000µs)
5200W (10/10,000µs)
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
Mounting Pad Layout
0.091(2.3)
0.067(1.7)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
0.116(3.0)
0.093(2.4)
Dimensions in
inches and (millimeters)
LEAD 1
0.197(5.0)
0.185(4.7)
0.138(3.5)
0.098(2.5)
0.366(9.3)
0.343(8.7)
0.606(15.4)
0.583(14.8)
0.150(3.8)
0.126(3.2)
0.016 (0.4) Min.
0.028(0.7)
0.020(0.5)
0.098(2.5)
0.059(1.5)
*
Patent #’s:
4,980,315
5,166,769
5,278,095
LEAD 2/METAL HEATSINK
Features
• Ideally suited for load dump protection
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High temperature stability due to unique oxide passiva-
tion and patented PAR
®
construction
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
• Low leakage current at T
J
= 175°C
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
• Meets ISO7637-2 surge spec.
• Low forward voltage drop
Mechanical Data
Case:
Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals:
Plated, solderable per MIL-STD-750, Method 2026
Polarity:
Heatsink is anode
Mounting Position:
Any
Weight:
0.091 oz., 2.58 g
Packaging codes/options:
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
Steady state power dissipation
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse derated above T
A
=25°C
Symbol
P
PPM
P
D
I
PPM
I
FSM
R
θJC
T
J
, T
STG
Value
6600
5200
8.0
See Table 1
700
0.90
-55 to +175
Unit
W
W
A
A
°C/W
°C
Document Number 88387
01-Aug-02
www.vishay.com
1
SM8S Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Device Type
Breakdown Voltage
V
(BR)
(V)
Min.
SM8S10
SM8S10A
SM8S11
SM8S11A
SM8S12
SM8S12A
SM8S13
SM8S13A
SM8S14
SM8S14A
SM8S15
SM8S15A
SM8S16
SM8S16A
SM8S17
SM8S17A
SM8S18
SM8S18A
SM8S20
SM8S20A
SM8S22
SM8S22A
SM8S24
SM8S24A
SM8S26
SM8S26A
SM8S28
SM8S28A
SM8S30
SM8S30A
SM8S33
SM8S33A
SM8S36
SM8S36A
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
Max.
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
Test Current
I
T
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Stand-off
Voltage
V
WM
(V)
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Maximum Max. Peak Maximum
Reverse
Pulse
Clamping
Leakage
Current
Voltage at
at V
WM
at 10/1000µs
I
PPM
Tc = 175
o
C Waveform
V
C
I
D
(µA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
(A)
351
388
328
363
300
332
277
307
256
284
245
270
229
254
216
239
205
226
184
204
168
186
153
170
142
157
132
145
123
136
112
124
103
114
(V)
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
Note:
For all types maximum V
F
= 1.8V at I
F
= 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
www.vishay.com
2
Document Number 88387
01-Aug-02
SM8S Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Power Derating Curve
8.0
6,000
Load Dump Power Characteristics
(10ms Exponential Waveform)
5,000
Power Dissipation (W)
6.0
Load Dump Power (W)
4,000
3,000
2,000
4.0
2.0
1,000
0
0
50
100
150
200
0
25
50
75
100
125
150
175
Case Temperature (°C)
Case Temperature (°C)
Pulse Waveform
150
T
A
= 25°C
Pulse width (t
d
) is defined as
the point where the peak
current decays to 50% of I
PP
10,000
Reverse Power Capability
Input Peak Pulse Current %
t
r
= 10µs
100
Peak Value I
PP
50
Half Value –
I
PP
2
10/1000µs
0
0
t
d
10
20
30
40
Reverse Surge Power (W)
1,000
10
100
Time, ms (t)
Pulse Width (ms) – 1/2 I
PP
Exponential Waveform
Typical Transient Thermal Impedance
100
Transient Thermal Impedance (°C/W)
R
ΘJA
10
1
R
ΘJC
0.1
0.01
0.01
0.1
1
10
100
t – Pulse Width (sec.)
Document Number 88387
01-Aug-02
www.vishay.com
3
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