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Datasheet> All Categories > Discrete semiconductor> The transistor> FZ400R06KF3
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FZ400R06KF3

Description
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size218KB，3 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

FZ400R06KF3 Overview

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,

FZ400R06KF3 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum collector current (IC)400 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1680 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)500 ns
Nominal on time (ton)400 ns
VCEsat-Max2.4 V
Base Number Matches1

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Download Datasheet
IGBT Standard Modules
Type
V
CES
V
I
C
A
I
CRM
A
t
p
= 1 ms
Dual modules
n
FF 15 R 12 KF
FF 25 R 06 KF2
n
FF 25 12 KF
FF 25 R 12 KF2
FF 30 R 17 KF
n
FF 50 R 06 KF2
FF 50 R 06 KF3
n
FF 50 R 12 KF
FF 50 R 12 KF2
n
FF 75 R 06 KF2
FF 75 R 06 KF3
n
FF 75 R 12 KF
FF 75 R 12 KF2
FF 90 R 17 KF
n
FF 100 R 06 KF2
FF 100 R 06 KF3
n
FF 100 R 12 KF
FF 100 R 12 KF2
n
FF 150 R 06 KF2
FF 150 R 06 KF3
FF 150 R 12 KF
n
FF 150 R 12 KF2
FF 180 R 17 KF
n
FF 200 R 06 KF2
FF 200 R 06 KF3
n
FF 200 R 12 KF
FF 200 R 12 KF2
n
FF 300 R 06 KF2
FF 300 R 06 KF3
FF 300 R 12 KF2
n
FF 400 R 06 KF2
FF 400 R 06 KF3
Single modules
n
FZ 200 R 12 KF
FZ 200 R 12 KF2
FZ 240 R 17 KF
n
FZ 300 R 12 KF
FZ 300 R 12 KF2
FZ 360 R 17 KF
n
FZ 400 R 06 KF2
FZ 400 R 06 KF3
n
FZ 400 R 12 KF
FZ 400 R 12 KF2
FZ 500 R 12 KF
FZ 600 R 12 KF2
FZ 800 R 06 KF3
1200
1200
1700
1200
1200
1700
600
600
1200
1200
1200
1200
600
200
200
240
300
300
360
400
400
400
400
500
600
800
400
400
480
600
600
720
800
800
800
800
1000
1200
1600
3,0
3,0
3,2
3,0
3,0
3,2
2,7
2,0
3,0
3,0
3,0
3,0
2,1
0,4
0,4
0,5
0,4
0,4
0,5
0,4
0,4
0,4
0,4
0,4
0,4
-
0,60
0,60
0,40
0,60
0,60
0,40
0,40
0,35
0,60
0,60
0,60
0,60
0,35
1200
600
1200
1200
1700
600
600
1200
1200
600
600
1200
1200
1700
600
600
1200
1200
600
600
1200
1200
1700
600
600
1200
1200
600
600
1200
600
600
15
25
25
25
30
50
50
50
50
75
75
75
75
90
100
100
100
100
150
150
150
150
180
200
200
200
200
300
300
300
400
400
30
50
50
50
60
100
100
100
100
150
150
150
150
180
200
200
200
200
300
300
300
300
360
400
400
400
400
600
600
600
800
800
3,0
2,7
3,0
3,0
3,2
2,7
2,1
3,0
3,0
2,7
2,1
3,0
3,0
3,2
2,7
2,1
3,0
3,0
2,7
2,1
3,0
3,0
3,2
2,7
2,1
3,0
3,0
2,7
2,1
3,0
2,7
2,1
0,4
0,4
0,4
0,4
0,5
0,4
0,4
0,4
0,4
0,4
0,4
0,4
0,4
0,5
0,4
0,4
0,4
0,4
0,4
0,4
0,4
0,4
0,5
0,4
0,4
0,4
0,4
0,4
0,4
0,4
0,4
0,4
0,50
0,40
0,50
0,50
0,40
0,40
0,35
0,50
0,50
0,40
0,35
0,50
0,50
0,40
0,40
0,35
0,60
0,60
0,40
0,35
0,60
0,60
0,40
0,40
0,35
0,60
0,60
0,40
0,35
0,60
0,40
0,35
IGBT-Standardmodule
V
CEsat
V
tvj=25°C
typ.
t
on
µs
tvj=25°C
typ.
t
s
µs
tvj=25°C
typ.
R
thJC
t
vj max
°C/W
°C
tvj=25°C
per arm
typ.
0,20
0,15
0,20
0,20
0,60
0,15
0,15
0,20
0,20
0,15
0,15
0,20
0,20
0,60
0,15
0,15
0,20
0,20
0,15
0,15
0,20
0,20
0,60
0,15
0,15
0,20
0,20
0,15
0,15
0,20
0,15
0,15
0,20
0,20
0,60
0,20
0,20
0,60
0,15
0,15
0,20
0,20
0,20
0,20
0,15
1,000
1,000
0,500
0,500
0,250
0,500
0,450
0,310
0,310
0,350
0,320
0,200
0,220
0,110
0,310
0,280
0,150
0,190
0,180
0,160
0,110
0,110
0,069
0,160
0,140
0,088
0,096
0,100
0,090
0,069
0,069
0,069
0,088
0,089
0,052
0,062
0,063
0,350
0,089
0,074
0,052
0,052
0,042
0,035
0,045
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
t
f
µs

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