FZ400R12KF2 datasheet, PDF - EEWORLD Datasheet

FZ400R12KF2: DescriptionInsulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size95KB，2 Pages; ManufacturerEUPEC [eupec GmbH]

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FZ400R12KF2 Overview

Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel,

Parameter Name	Attribute value
Reach Compliance Code	unknown
Maximum collector current (IC)	400 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2400 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
VCEsat-Max	4 V
Base Number Matches	1

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