COMMERCIAL LASERS
Diode Lasers, Single-mode 50 to 200 mW, 810/830/852 nm
54xx Series
Key Features
• 200 mW kink-free power
• Narrow spectral width
• High efficiency
• Low astigmatism
• High reliability
Applications
• Illumination
• Printing
• Sensing
• Medical applications
• Imaging
High-resolution applications including optical data storage, image recording,
spectral analysis, printing, point-to-point free-space communications and
frequency doubling all require diffraction-limited sources. Faster writing, wider
dynamic range and better signal-to-noise ratio may be achieved with JDSU’s
high-reliability 5400 Series single-mode diode lasers.
Available in power levels up to 200 mW kink-free, this advanced diode laser
combines a quantum well structure and a real-refractive index-guided single-
mode waveguide to provide high power, low astigmatism, narrow spectral width
and a single spatial mode Gaussian far field. Our 5400 Series diode lasers are
among the most reliable high-power diode lasers available in the industry today.
The 5400 Series diode lasers operate in single longitudinal mode under some
conditions. Like in all Fabry-Perot index-guided diode lasers, spectral broadening,
mode hopping and longitudinal mode instability may occur due to small changes
in drive current, diode-junction temperature or optical feedback.
The unique diode structure features high reliability with long operating life and
very low early failure rate. The highest brightness (20 MW/cm
2
steradian) is
provided by our 5430.
NORTH AMERICA
:
800 498-JDSU (5378)
WORLDWIDE
:
+800 5378-JDSU
WEBSITE
:
www.jdsu.com
54XX SERIES DIODE LASERS
2
Dimensions Diagrams
(Specifications in inches [mm] unless otherwise noted.)
Standard Tolerances
inches: x.xx = ±0.02
mm: x.x = ±0.5
x.xxx = ±0.010
x.xx = ±0.25
Package Style: SOT-148 Window (G1)
Pinout
0.05 (1.3)
0.26
Nom.
(6.6)
0.20
(5.1)
0.14 (3.5)
Laser Facet Depth
= 0.04 (1.0) Nom.
0.354
±0.005
(9.00
±0.13)
0.260
±0.005
(6.60
±0.13)
0.14 (3.6)
Pin
1
2
3
Description
3
Laser cathode (–)
Laser anode, MPD cathode
and case ground
Monitor photodiode anode (+)
2
1
0.10
(2.5)
Laser
Output
θ
θ
Window: AR Coating, Both Surfaces
Thickness: 0.0100
±0.002
(0.25
±0.05)
Package Style: TO-56 Window (J1)
Pinout
0.04
(1.0)
0.26
(6.5)
0.14
(3.6)
0.10 (2.4)
Laser Facet Depth
= 0.05 (1.2) Nom.
3
2
1
0.08
(2.0)
Laser
Output
0.14
(3.6)
0.17
(4.2)
0.05 (1.3)
Pin
1
2
3
Description
Laser cathode (–)
Laser anode, MPD cathode
and case ground
Monitor photodiode anode (+)
θ
θ
Window: AR Coating, Both Surfaces
Thickness: 0.010
±0.001
(0.25
±0.03)
54XX SERIES DIODE LASERS
3
Available Configurations
5400 Series
5401-G1
5401-J1
5410 Series
5411-G1
5411-J1
5420 Series
5421-G1
5421-J1
5430 Series
5431-G1
5431-J1
Electro-optical Specifications
Parameter
Laser Characteristics
CW output power, kink-free
2
Center wavelength
Spectral width
1
Slope efficiency
Conversion efficiency
Emitting dimensions
FWHM beam divergence
Parallel to junction
Perpendicular to junction
Threshold current
Operating current
Operating voltage
Series resistance
Thermal resistance
Recommended case temperature
Absolute Maximum Ratings
Reverse voltage
Case operating temperature
Storage temperature range
Lead soldering temperature
Monitor Photodiode
Sensitivity
G1 package
J1 package
Capacitance
Breakdown voltage
Operating voltage
Symbol
5400 Series
Typ.
Max.
Min.
–
–
–
0.75
–
–
–
–
–
–
–
–
–
-20
–
(note
5
)
3
0.85
30
3x1
9
30
35
95
(note
4
)
4.0
60
–
50
–
5
–
–
–
–
–
45
105
–
6.0
–
30
5410 Series
Min.
Typ.
Max.
–
–
–
0.75
–
–
–
–
–
–
–
–
–
-20
–
(note
5
)
3
0.85
30
3x1
9
30
35
160
(note
4
)
4.0
60
–
100
–
5
–
–
–
–
–
45
170
–
6.0
–
30
Unit
Po
λ
c
Δλ
η
D = Po/(Iop–Ith)
η
= Po/(IopVop)
WxH
θ
//
θ⊥
Ith
Iop
Vop
Rs
Rth
Tc
mW
nm
mW/mA
%
µm
degrees
degrees
mA
mA
Ω
°C/W
°C
Vrl
Top
Tstg
Tis
–
-20
-40
–
–
–
–
–
3
50
80
250
–
-20
-40
–
–
–
–
–
3
50
80
250
V
°C
°C
°C (5 sec.)
–
–
–
Vbd
Vop
0.1
3.0
–
–
–
–
–
6
25
10
20
24
–
–
–
0.1
3.0
–
–
–
–
–
6
25
10
20
24
–
–
–
µA/mW
µA/mW
pF
V
V
1.
Emission bandwidth for 90% integrated power.
2. Typical values at 25 °C and 0.6 NA collection optics.
3. Features common to all 5400 series diode lasers include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
I
TH2
= I
TH1
exp [(T
2
– T
1
)/T
0
] where T
0
is a device constant of about 110 °K.
d. Temperature coefficient of operating current is approximately 0.5 to
0.7% per °C.
4. Forward voltage is typically: V
f
= 1.5 V + I
op
x R
s
.
5. Wavelength ranges for the 5400 and 5410 series:
800-820 nm
810-850 nm
842-862 nm
A variety of part numbers are available that each designate a particular subset within these wavelength ranges. Consult tables on page 5.
6. Astigmatism is less than 5 µm.
54XX SERIES DIODE LASERS
4
Electro-optical Specifications
Continued
Parameter
Laser Characteristics
CW output power, kink-free
2
Center wavelength
Spectral width
1
Slope efficiency
Conversion efficiency
Emitting dimensions
FWHM beam divergence
Parallel to junction
Perpendicular to junction
Threshold current
Operating current
Operating voltage
Series resistance
Thermal resistance
Recommended case temperature
Absolute Maximum Ratings
Reverse voltage
Case operating temperature
Storage temperature range
Lead soldering temperature
Monitor Photodiode
Sensitivity
Capacitance
Breakdown voltage
Operating voltage
Symbol
5420 Series
Typ.
Max.
Min.
–
–
–
0.75
–
–
–
–
–
–
–
–
–
-20
–
(note
5
)
3
0.85
30
3x1
9
30
35
210
(note
4
)
4.0
60
–
150
–
5
–
–
–
–
–
45
230
–
6.0
–
30
5430 Series
Min.
Typ.
Max.
–
–
–
0.75
–
–
–
–
–
–
–
–
–
-20
–
(note
5
)
3
0.85
30
3x1
9
30
40
270
(note
4
)
4.0
60
–
200
–
5
–
–
–
–
–
50
300
–
6.0
–
30
Unit
Po
λ
c
Δλ
η
D = Po/(Iop–Ith)
η
= Po/(IopVop)
WxH
θ
//
θ⊥
Ith
Iop
Vop
Rs
Rth
Tc
mW
nm
mW/mA
%
µm
degrees
degrees
mA
mA
Ω
°C/W
°C
Vrl
Top
Tstg
Tis
–
-20
-40
–
–
–
–
–
3
50
80
250
–
-20
-40
–
–
–
–
–
3
50
80
250
V
°C
°C
°C (5 sec.)
–
–
Vbd
Vop
0.1
–
–
–
–
6
25
10
20
–
–
–
0.1
–
–
–
–
6
25
10
20
–
–
–
µA/mW
pF
V
V
1.
Emission bandwidth for 90% integrated power.
2. Typical values at 25 °C and 0.6 NA collection optics.
3. Features common to all 5400 series diode lasers include:
a. Duty factor of 100%.
b. Temperature coefficient of wavelength is approximately 0.3 nm/°C.
c. Temperature coefficient of threshold current can be modeled as:
I
TH2
= I
TH1
exp [(T
2
– T
1
)/T
0
] where T
0
is a device constant of about 110 °K.
d. Temperature coefficient of operating current is approximately 0.5 to
0.7% per °C.
4. Forward voltage is typically: V
f
= 1.5 V + I
op
x R
s
.
5. Wavelength ranges for the 5420 series:
800-820 nm
810-850 nm
842-862 nm
Wavelength range for the 5430 series is limited to 820-840 nm.
A variety of part numbers are available that each designate a particular subset within these wavelength ranges. Consult tables on page 5.
6. Astigmatism is less than 5 µm.
54XX SERIES DIODE LASERS
5
Typical Optical Characteristics
Light vs. Current
Characteristics
Light vs. Current
Characteristics
Light vs. Current
Characteristics
Far Field Energy
Distribution
Far Field Energy
Distribution
5410
5420
150
200
5430
200 mW
160 mW
FWHM
= 30
o
FWHM
= 9
o
100 mW
CW Output Power (mW)
100
50
5400
75
100
0
40
80 120 160 200
Current (mA)
0
50 100 150 200
Current (mA)
0
60 120 180 240 300
Current (mA)
40
θ
20
0
20
40
20 10
(degrees)
θ
0 10
20
(degrees)
Ordering Information
For more information on this or other products and their availability, please contact your local JDSU account manager or
JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at
customer.service@jdsu.com.
Sample: 54-00202
Part Number
54-00202
54-00203
Call for part number
54-00204
54-00205
54-00206
54-00207
Call for part number
54-00210
Call for part number
54-00211
Call for part number
54-00212
Call for part number
54-00213
54-00214
Power
50 mW
50 mW
50 mW
50 mW
100 mW
100 mW
100 mW
150 mW
150 mW
150 mW
150 mW
150 mW
150 mW
200 mW
200 mW
200 mW
Wavelength
810 (±5)
830 (-10/+20)
830 (-10/+20)
852 (±10)
810 (±5)
830 (-10/+20)
852 (±10)
810 (±5)
810 (±5)
830 (±10)
830 (±10)
852 (±10)
852 (±10)
830 (±10)
830 (±10)
852 (±10)
Package
5.6 mm TO-56
5.6 mm TO-56
9 mm SOT-148
5.6 mm TO-56
5.6 mm TO-56
5.6 mm TO-56
5.6 mm TO-56
9 mm SOT-148
5.6 mm TO-56
9 mm SOT-148
5.6 mm TO-56
9 mm SOT-148
5.6 mm TO-56
9 mm SOT-148
5.6 mm TO-56
5.6 mm TO-56
Microchip MCU
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