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JAN2N2906AL

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size709KB,8 Pages
ManufacturerVPT Inc
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JAN2N2906AL Overview

Small Signal Bipolar Transistor,

JAN2N2906AL Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)0.6 A
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-206AA
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
GuidelineMIL-19500
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N2906A, L, UA, UB
2N2907A, L, UA, UB
Radiation Hardened PNP Silicon Switching Transistors
Rev. V3
Features
Qualified to MIL-PRF-19500/291
Available in JAN, JANTX, JANTXV, JANS and JANSR
Rad Hard Levels M, D, P, L and R
TO-18, Surface Mount UA & UB Packages
Applications
Switching and Linear Applications
DC and VHF Amplifier Applications
Electrical Specifications (T
A
= 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Units
Minimum Maximum
Collector
-
Emitter Breakdown
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
I
C
=
-10
mA dc
V
CB
=
-60
V dc
V
CB
=
-50
V dc
V
EB
=
-5.0
V dc
V
EB
=
-4.0
V dc
V
CE
=
-50
V dc
2N2906A, L, UA, UB
V
CE
=
-10
V dc: I
C
=
-0.1
mA dc
V
CE
=
-10
V dc; I
C
=
-1.0
mA dc
V
CE
=
-10
V dc; I
C
=
-10.0
mA dc
V
CE
=
-10
V dc; I
C
=
-150.0
mA dc
V
CE
=
-10
V dc; I
C
=
-500.0
mA dc
2N2907A, L, UA, UB
V
CE
=
-10
V dc; I
C
=
-0.1
mA dc
V
CE
=
-10
V dc; I
C
=
-1.0
mA dc
V
CE
=
-10
V dc; I
C
=
-10.0
mA dc
V
CE
=
-10
V dc; I
C
=
-150.0
mA dc
V
CE
=
-10
V dc; I
C
=
-500.0
mA dc
V
(BR)CEO
I
CBO1
I
CBO2
I
EBO1
I
EBO2
I
CES
V dc
µA dc
nA dc
µA dc
nA dc
nA dc
-60
-10
-10
-10
-50
-50
40
40
40
40
40
h
FE
75
100
100
100
50
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
I
CBO3
V dc
V dc
µA dc
-0.6
175
120
450
300
-0.4
-1.6
-1.3
-2.6
-10
Forward Current Transfer Ratio
Collector
-
Base Cutoff Current
Base
-
Emitter Saturation Voltage
Collector
-
Base Cutoff Current
I
C
=
-150
mA dc, I
B
=
-15
mA dc
I
C
=
-500
mA dc, I
B
=
-50
mA dc
I
C
=
-150
mA dc, I
B
=
-15
mA dc
I
C
=
-500
mA dc, I
B
=
-50
mA dc
T
A
= +150
o
C
V
CB
=
-50
V dc
T
A
=
-55
o
C
V
CE
=
-10
V dc: I
C
=
-10
mA dc
2N2906A
2N2907A
Forward Current Transfer Ratio
h
FE6
-
20
50
1
(Continued next page)
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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