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ZDT717TC

Description
Power Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size2MB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZDT717TC Overview

Power Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

ZDT717TC Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage12 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)45
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment2.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)110 MHz
Base Number Matches1
SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT717
C
1
C
1
C
2
C
2
PARTMARKING DETAIL – T717
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
T
j
:T
stg
VALUE
-12
-12
-5
-10
-2.5
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
SYMBOL
P
tot
VALUE
2
2.5
16
20
62.5
50
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 348

ZDT717TC Related Products

ZDT717TC ZDT717TA
Description Power Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN Power Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
package instruction SMALL OUTLINE, R-PDSO-G8 SM-8, 8 PIN
Reach Compliance Code unknown not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 2.5 A 2.5 A
Collector-emitter maximum voltage 12 V 12 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 45 45
JESD-30 code R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 8 8
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power consumption environment 2.5 W 2.5 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 110 MHz 110 MHz
Base Number Matches 1 1
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