ZVP2120ZTA datasheet, PDF - EEWORLD Datasheet

ZVP2120ZTA: DescriptionPower Field-Effect Transistor, 0.17A I(D), 200V, 25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size32KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZVP2120ZTA Overview

Power Field-Effect Transistor, 0.17A I(D), 200V, 25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.17 A
Maximum drain-source on-resistance	25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	7 pF
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	1.2 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Maximum off time (toff)	27 ns
Maximum opening time (tons)	22 ns
Base Number Matches	1

	ZVP2120ZTA
Description	Power Field-Effect Transistor, 0.17A I(D), 200V, 25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it Rohs certified?	conform to
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.17 A
Maximum drain-source on-resistance	25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	7 pF
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	1.2 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Maximum off time (toff)	27 ns
Maximum opening time (tons)	22 ns
Base Number Matches	1

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