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UZDT1049TA

Description
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size124KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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UZDT1049TA Overview

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

UZDT1049TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSM-8, 8 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage25 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)35
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power consumption environment2.75 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
Base Number Matches1

UZDT1049TA Related Products

UZDT1049TA
Description Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
Is it Rohs certified? conform to
package instruction SM-8, 8 PIN
Reach Compliance Code not_compliant
ECCN code EAR99
Maximum collector current (IC) 5 A
Collector-emitter maximum voltage 25 V
Configuration SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 35
JESD-30 code R-PDSO-G8
JESD-609 code e3
Humidity sensitivity level 1
Number of components 2
Number of terminals 8
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type NPN
Maximum power consumption environment 2.75 W
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 180 MHz
Base Number Matches 1
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