®
74VHC74
DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR
s
s
s
s
s
s
s
s
s
HIGH SPEED:
f
MAX
=170 MHz (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 2
µA
(MAX.) at T
A
= 25
o
C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 74
IMPROVED LATCH-UP IMMUNITY
M
(Micro Package)
T
(TSSOP Package)
ORDER CODES :
74VHC74M
74VHC74T
CLEAR and PRESET are independent of the
clock and accomplished by a low setting on the
appropriate input.
It is ideal for low power applications maintaining
high speed operation similar to equivalent Bipolar
Schottky TTL.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
DESCRIPTION
The 74VHC74 is an advanced high-speed CMOS
DUAL D-TYPE FLIP FLOP WITH PRESET AND
CLEAR fabricated with sub-micron silicon gate
and
double-layer metal
wiring
C
2
MOS
technology.
A signal on the D INPUT is transfered to the Q
OUTPUT during the positive going transition of
the clock pulse.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 1999
1/10
74VHC74
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
o
o
I
CC
or I
GND
DC V
CC
or Ground Current
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (see note 1) (V
CC
= 3.3
±
0.3V)
(V
CC
= 5.0
±
0.5V)
Parameter
Valu e
2.0 to 5.5
0 to 5.5
0 to V
CC
-40 to +85
0 to 100
0 to 20
Unit
V
V
V
o
C
ns/V
ns/V
1) V
IN
from 30% to70%of V
CC
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
V
CC
(V)
V
IH
V
IL
V
OH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
2.0
3.0 to 5.5
2.0
3.0 to 5.5
2.0
3.0
4.5
3.0
4.5
V
OL
Low Level Output
Voltage
2.0
3.0
4.5
3.0
4.5
I
I
I
CC
Input Leakage Current
Quiescent Supply
Current
0 to 5.5
5.5
I
O
=-50
µA
I
O
=-50
µA
I
O
=-50
µ
A
I
O
=-4 mA
I
O
=-8 mA
I
O
=50
µA
I
O
=50
µA
I
O
=50
µ
A
I
O
=4 mA
I
O
=8 mA
V
I
= 5.5V or GND
V
I
= V
CC
or GND
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±0.1
2
2.0
3.0
4.5
o
Value
T
A
= 25 C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.48
3.8
0.1
0.1
0.1
0.44
0.44
±1.0
20
Typ .
Max.
-40 to 85 C
Min .
1.5
0.7V
CC
0.5
0.3V
CC
Max.
o
Un it
V
V
V
V
µA
µA
3/10
74VHC74
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
=3 ns)
Symb ol
Parameter
Test Co ndition
V
CC
C
L
(V)
(pF )
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
3.3
(*)
5.0
(**)
t
PLH
t
PHL
Propagation Delay
Time
CK to Q or Q
15
50
15
50
15
50
15
50
Value
T
A
= 25 C
Min. Typ . Max.
6.7
11.9
9.2
15.4
o
Un it
-40 to
Min .
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
85 C
Max.
14.0
17.5
8.5
10.5
14.5
18.0
9.0
11.0
7.0
5.0
7.0
5.0
7.0
5.0
0.5
0.5
5.0
3.0
70
45
110
75
o
ns
t
PLH
t
PHL
Propagation Delay
Time
PR or CLR to Q or Q
4.6
6.1
7.6
10.1
4.8
6.3
t
w
t
w
t
s
t
h
t
REM
f
MAX
CK Pulse Width
HIGH or LOW
PR or CLR Pulse
Width LOW
Setup Time D to CK
HIGH or LOW
Hold Time D to CK
HIGH or LOW
Removal Time CLR or
PR to CK
Maximum Clock
Frequency
7.3
9.3
12.3
15.8
7.7
9.7
6.0
5.0
6.0
5.0
6.0
5.0
0.5
0.5
5.0
3.0
ns
ns
ns
ns
ns
ns
3.3
(*)
5.0
(**)
3.3
5.0
(**)
3.3
(*)
5.0
(**)
3.3
(*)
5.0
(**)
(*)
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
15
50
15
50
80
50
130
90
125
75
170
115
MHz
(*) Voltage range is 3.3V
±
0.3V
(**) Voltage range is 5V
±
0.5V
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
V
CC
(V)
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note 1)
3.3
3.3
f
IN
= 10 MHz
Test Co nditions
o
Valu e
-40 to 85 C
T
A
= 25 C
Min. T yp. Max. Min. Max.
4
25
10
10
o
Un it
pF
pF
1) C
PD
isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operting current can be obtained by the following equation. I
CC
(opr) = C
PD
•
V
CC
•
f
IN
+ I
CC
/2(per Flip-Fliop)
4/10
74VHC74
TEST CIRCUIT
C
L
= 15/50 pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM 1: PROPAGATION DELAYS, SETUP AND HOLD TIMES
(f=1MHz; 50% duty cycle)
5/10
RF/Wirelessly
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