®
74VHCT08A
QUAD 2-INPUT AND GATE
s
s
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 4.7 ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 2
µA
(MAX.) at T
A
= 25
o
C
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), V
IL
= 0.8V (MAX)
POWER DOWN PROTECTION ON INPUTS &
OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 08
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: V
OLP
= 0.8V (Max.)
M
(Micro Package)
T
(TSSOP Package)
ORDER CODES :
74VHCT08AM
74VHCT08AT
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
DESCRIPTION
The 74VHCT08A is an advanced high-speed
CMOS QUAD 2-INPUT AND GATE fabricated
with sub-micron silicon gate and double-layer
metal wiring C
2
MOS technology.
PIN CONNECTION AND IEC LOGIC SYMBOLS
August 1999
1/7
74VHCT08A
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 4, 9, 12
2, 5, 10, 13
3, 6, 8, 11
7
14
SYMBOL
1A to 4A
1B to 4B
1Y to 4Y
GND
V
CC
NAME AND FUNCT ION
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
L
H
H
B
L
H
L
H
Y
L
L
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage (see note 1)
DC Output Voltage (see note 2)
DC Input Diode Current
DC Output Diode Current
DC Output Current
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
300
Unit
V
V
V
V
mA
mA
mA
mA
o
o
I
CC
or I
GND
DC V
CC
or Ground Current
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
1) V
CC
=0V
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage (see note 1)
Output Voltage (see note 2)
Operating Temperature
Input Rise and Fall Time (see note 3) (V
CC
= 5.0
±
0.5V)
Parameter
Valu e
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
-40 to +85
0 to 20
Unit
V
V
V
V
o
C
ns/V
1) V
CC
=0V
2) High or Low State
3)V
IN
from0.8V to 2 V
2/7
74VHCT08A
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
V
CC
(V)
V
IH
V
IL
V
OH
V
OL
I
I
I
CC
∆
I
CC
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage Current
Quiescent Supply
Current
Additional Worst Case
Supply Current
Output Leakage
Current
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
0 to 5.5
5.5
5.5
I
O
=-50
µA
I
O
=-8 mA
I
O
=50
µ
A
I
O
=8 mA
V
I
= 5.5V or GND
V
I
= V
CC
or GND
One Input at 3.4V,
other input at V
CC
or
GND
V
OUT
= 5.5V
4.4
3.94
0.0
0.1
0.36
±0.1
2
1.35
4.5
o
Value
T
A
= 25 C
Min.
2
0.8
4.4
3.8
0.1
0.44
±1.0
20
1.5
Typ .
Max.
-40 to 85 C
Min .
2
0.8
Max.
o
Un it
V
V
V
V
µA
µA
mA
I
OPD
0
0.5
5.0
µA
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
=3 ns)
Symb ol
Parameter
Test Co ndition
V
CC
(*)
C
L
(pF )
(V)
5.0
5.0
15
50
Value
T
A
= 25 C
Min. Typ . Max.
4.7
6.7
5.5
7.7
o
Un it
-40 to 85 C
Min . Max.
1.0
7.5
1.0
8.5
o
t
PLH
t
PHL
Propagation Delay
Time
ns
(*) Voltage range is 5V
±
0.5V
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
o
Value
T
A
= 25 C
Min.
Typ .
4
14
Max.
10
-40 to 85 C
Min .
Max.
10
o
Un it
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note 1)
pF
pF
1) C
PD
isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. I
CC
(opr) = C
PD
•
V
CC
•
f
IN
+ I
CC
/4 (per Gate)
3/7
74VHCT08A
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
V
CC
(V)
V
OLP
V
OLV
V
IHD
V
ILD
Dynamic Low Voltage
Quiet Output (note 1, 2)
Dynamic High Voltage
Input (note 1, 3)
Dynamic Low Voltage
Input (note 1, 3)
5.0
-0.8
5.0
5.0
C
L
= 50 pF
2
0.8
o
Value
T
A
= 25 C
Min.
Typ .
0.4
-0.4
Max.
0.8
-40 to 85 C
Min .
Max.
o
Un it
V
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n -1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to3.0V. Inputs under test switching: 3.0V to threshold (V
ILD
), 0V to threshold (V
IHD
), f=1MHz.
TEST CIRCUIT
C
L
= 15/50 pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAYS
(f=1MHz; 50% duty cycle)
4/7
Embedded System
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