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BUY49S.MODR1

Description
Small Signal Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BUY49S.MODR1 Overview

Small Signal Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

BUY49S.MODR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionTO-39, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
BUY49S
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
SILICON NPN TRANSISTOR
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
APPLICATIONS
• Switching Speed
• Low Collector Emitter Saturation
• General Purpose Switching
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
Underside View
TO–39 PACKAGE (TO-205AD)
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
(T
case
= 25°C unless otherwise stated)
ABSOLUTE MAXIMUM RATINGS
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Collector – Base Voltage (I
E
= 0)
Collector – Emitter Voltage(I
B
= 0)
Emitter – Base Voltage
(I
C
= 0)
Collector Current
Peak Collector Current
Total Power Dissipation
@T
amb
25°C
@T
case
50°C
T
STG
Storage Temperature Range
T
J
Maximum Operating Junction Temperature
Rthj-case Thermal resistance Junction-case
Rthj-amb Thermal Resistance Junction-case-ambient
250V
200V
6V
3A
5A
1W
1W
–65 to +200°C
200°C
15°C/W
175°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3089
Issue 1

BUY49S.MODR1 Related Products

BUY49S.MODR1 BUY49SR1 BUY49S.MOD
Description Small Signal Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
Is it Rohs certified? conform to conform to incompatible
Maker TT Electronics plc TT Electronics plc TT Electronics plc
package instruction TO-39, 3 PIN TO-39, 3 PIN TO-39, 3 PIN
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 3 A 3 A 3 A
Collector-emitter maximum voltage 200 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40
JEDEC-95 code TO-205AD TO-205AD TO-205AD
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz
Base Number Matches 1 1 1
JESD-609 code e1 e1 -
Terminal surface TIN SILVER COPPER TIN SILVER COPPER -

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