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LBC847AWT3G

Description
Small Signal Bipolar Transistor, 0.1A I(C), NPN,
CategoryDiscrete semiconductor    The transistor   
File Size301KB,9 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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LBC847AWT3G Overview

Small Signal Bipolar Transistor, 0.1A I(C), NPN,

LBC847AWT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)110
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Nominal transition frequency (fT)100 MHz
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
( Pb– Free )
Device
LBC846AWT1G
LBC846AWT3G
Package
SC-70
SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
CWT1G
LBC848AWT1G,BWT1G
CWT1G
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
1
2
SOT–323 /SC–70
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
LBC846 Series
LBC847 Series
LBC848 Series
V
(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
15
5.0
v
V
(BR)CES
v
V
(BR)CBO
v
V
(BR)EBO
I
CBO
v
nA
µA
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
Rev.O 1/9

LBC847AWT3G Related Products

LBC847AWT3G LBC847CWT3G LBC848BWT3G LBC846BWT3G LBC848AWT3G LBC848CWT3G LBC847BWT3G
Description Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN, Small Signal Bipolar Transistor, 0.1A I(C), NPN,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 110 420 200 200 110 420 200
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
surface mount YES YES YES YES YES YES YES
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Maker LRC LRC - - LRC LRC LRC
Base Number Matches 1 1 1 1 1 - -
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