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ZVP0535A

Description
Small Signal Field-Effect Transistor, 0.05A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size111KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZVP0535A Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN

ZVP0535A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage350 V
Maximum drain current (Abs) (ID)0.05 A
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance100 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.7 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt V
DS
* R
DS(on)
=100Ω
ZVP0535A
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-350
-50
-480
±
20
UNIT
V
mA
mA
V
mW
°C
700
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN. MAX. UNIT CONDITIONS.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
40
120
20
5
10
15
15
20
-120
100
-350
-1.5
-4.5
100
-20
-2
V
V
nA
µ
A
mA
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=-350 V, V
GS
=0
V
DS
=-280 V, V
GS
=0V,
T=125°C
(2)
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V,I
D
=-50mA
V
DS
=-25V,I
D
=-50mA
mA
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25 V, V
GS
=0V, f=1MHz
V
DD
-25V, I
D
=-50mA
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
2%
3-409
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