OM6407SDT datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> OM6407SDT

Preview

OM6407SDT: DescriptionPower Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size175KB，4 Pages; ManufacturerOmnirel Corp.

Download Datasheet Parametric Compare View All

OM6407SDT Overview

Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

OM6407SDT Parametric

Parameter Name	Attribute value
Maker	Omnirel Corp.
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	5.5 A
Maximum drain-source on-resistance	1.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MDFM-F16
Number of components	4
Number of terminals	16
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

OM6407SDT Related Products

	OM6407SDT	OM6405SDV	OM6405SDT	OM6406SDV	OM6406SDT	OM6408SDV	OM6408SDT	OM6407SDV
Description	Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Maker	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V	100 V	100 V	200 V	200 V	500 V	500 V	400 V
Maximum drain current (ID)	5.5 A	14 A	14 A	9 A	9 A	4.5 A	4.5 A	5.5 A
Maximum drain-source on-resistance	1.05 Ω	0.2 Ω	0.2 Ω	0.44 Ω	0.44 Ω	1.6 Ω	1.6 Ω	1.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16	R-MDFM-F16
Number of components	4	4	4	4	4	4	4	4
Number of terminals	16	16	16	16	16	16	16	16
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A	30 A	30 A	25 A	25 A	18 A	18 A	20 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

Recommended Resources

Transformer temperature intelligent monitor circuit module design

High frequency signal output amplifier

Low voltage adjustable reference power circuit

High Common Mode Voltage Differential Amplifier Circuit

555 refrigerator power saver circuit

Astable circuit with adjustable pulse width

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components