SML200HB12 datasheet, PDF - EEWORLD Datasheet

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SML200HB12: Description295A, 1200V, N-CHANNEL IGBT, METAL PACKAGE-9; CategoryDiscrete semiconductor The transistor; File Size615KB，7 Pages; ManufacturerSEMELAB

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SML200HB12 Overview

295A, 1200V, N-CHANNEL IGBT, METAL PACKAGE-9

SML200HB12 Parametric

Parameter Name	Attribute value
Maker	SEMELAB
package instruction	FLANGE MOUNT, R-MUFM-X9
Contacts	9
Reach Compliance Code	compliant
Other features	HIGH REALIBILITY
Shell connection	ISOLATED
Maximum collector current (IC)	295 A
Collector-emitter maximum voltage	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-MUFM-X9
Number of components	2
Number of terminals	9
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Nominal off time (toff)	830 ns
Nominal on time (ton)	400 ns
Base Number Matches	1

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SML200HB12

Attributes:

-Aerospace build standard

-High reliability

-Lightweight

-Metal matrix base plate

-AlN isolation

-Trench gate igbts

Maximum rated values/Electrical Properties

Collector-emitter Voltage

DC Collector Current

Repetitive peak Collector Current

1200

200

295

400

Tc=70C, Tvj=175C

Tc=25C,Tvj=175C

tp=1msec,Tc=80C

Total Power Dissipation

O IN

PY A

Tc=25C

tp=1msec

Vr=0V, tp=10msec,

Tvj=125C

RMS, 50Hz, t=1min

Ic=200A,Vge=15V, Tc=25C

Ic=200A,Vge=15V,Tc=125C

Ic=8mA,Vce=Vge, Tvj=25C

f=1MHz,Tvj=25C,Vce=25V,

Vge=0V

f=1MHz,Tvj=25C,Vce=25V,

Vge=0V

Vce=1200V,Vge=0V,Tvj=25C

Vce=0V,Vge=20V,Tvj=25C

crm

tot

ges

frm

isol

ce(sat)

Vge

(th)

ies

res

ces

ges

, nom

2380

Gate-emitter peak voltage

DC Forward Diode

Current

Repetitive Peak

Forward Current

+/-20

200

400

t value per diode

7800

2500

1.7

2.0

5.0

5.8

0.5

400

2.15

sec

Isolation voltage

Collector-emitter saturation

voltage

Gate Threshold voltage

Input capacitance

Reverse transfer Capacitance

Collector emitter cut off

current

Gate emitter cut off current

6.5

SML200HB12 Related Products

	SML200HB12
Description	295A, 1200V, N-CHANNEL IGBT, METAL PACKAGE-9
Maker	SEMELAB
package instruction	FLANGE MOUNT, R-MUFM-X9
Contacts	9
Reach Compliance Code	compliant
Other features	HIGH REALIBILITY
Shell connection	ISOLATED
Maximum collector current (IC)	295 A
Collector-emitter maximum voltage	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-MUFM-X9
Number of components	2
Number of terminals	9
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Nominal off time (toff)	830 ns
Nominal on time (ton)	400 ns
Base Number Matches	1

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