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FMMT6520

Description
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size49KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

FMMT6520 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon

FMMT6520 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.33 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max1 V
Base Number Matches1
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 - NOVEMBER 1995
FEATURES
* 350 Volt V
CEO
* Gain of 15 at I
C
=-100mA
7
FMMT6520
E
C
B
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
COMPLEMENTARY TYPE FMMT6517
PARTMARKING DETAIL – 520
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
I
CBO
I
EBO
V
CE(sat)
MIN.
-350
-350
-5
-50
-50
-0.3
-0.35
-0.5
-1.0
-0.75
-0.85
-0.90
-2.0
20
30
30
20
15
50
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
nA
nA
V
V
V
V
V
V
V
V
VALUE
-350
-350
-5
-500
330
-55 to +150
CONDITIONS.
I
C
=-100
µ
A, I
E
=0
I
C
=-1mA, I
B
=0*
I
E
=-10
µ
A, I
C
=0
V
CB
=-250V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-10mA, I
B
=-1mA*
I
C
=-20mA, I
B
=-2mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-50mA, I
B
=-5mA*
I
C
=-10mA, I
B
=-1mA*
I
C
=-20mA, I
B
=-2mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-100mA, V
CE
=-10V*
I
C
=-1mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
pF
MHz
V
CB
=20V, f=1MHz
I
C
=-10mA, V
CE
=-20V,
f=20MHz
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
V
BE(sat)
V
BE(on)
h
FE
200
200
6
Output Capacitance
Transition Frequency
C
obo
f
T
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
3 - 172
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