BL4N50F datasheet, PDF - EEWORLD Datasheet

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BL4N50F: DescriptionPower MOSFET; Channel Polarity: N-Channel; V(BR)DSS Min (V): 500V; ID Max (A): 4A; RDS(ON) Max (Ω): 2 Ohm; ID (A): 2A; VGS (V): 10V; VGS Max (V): 4V; ID (mA): 250mA; GFS Min (S): / S; Package: ITO-220AB; CategoryDiscrete semiconductor The transistor; File Size239KB，3 Pages; ManufacturerGalaxy Microelectronics

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BL4N50F Overview

Power MOSFET; Channel Polarity: N-Channel; V(BR)DSS Min (V): 500V; ID Max (A): 4A; RDS(ON) Max (Ω): 2 Ohm; ID (A): 2A; VGS (V): 10V; VGS Max (V): 4V; ID (mA): 250mA; GFS Min (S): / S; Package: ITO-220AB

BL4N50F Parametric

Parameter Name	Attribute value
Maker	Galaxy Microelectronics
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	216 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	16 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Production specification

4A,500V

N-Channel Power Mosfet

FEATURES



DS(ON)

=2.0Ω@ V

= 10V

High Switching Speed

100% Avalanche Tested

BL4N50F

Lead-free

ITO-220AB

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

DSS

GSS

dv/dt

θJA

θJC

OPR

, Tstg

Parameter

Drain-Source voltage

Gate -Source voltage

Continuous Drain Current

Pulsed Drain Current

Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Thermal resistance,Junction-to-Ambient

Junction to Ambient

Junction to Case

Junction Temperature

Operating

and Storage Temperature

Value

500

±30

Single Pulsed

Repetitive

216

8.5

4.5

62.5

4.5

+150

-55 to +150

Units

V/ns

℃/W

℃

S071

Rev.A

www.gmesemi.com

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