PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
μ
PA2741GR
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The
μ
PA2741GR is N-channel MOS Field Effect Transistor
designed for power management applications of a notebook
computer and Lithium-Ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
FEATURES
•
Low on-state resistance
R
DS(on)1
= 7.0 mΩ MAX. (V
GS
= 10 V, I
D
= 7 A)
R
DS(on)2
= 12 mΩ MAX. (V
GS
= 5 V, I
D
= 7 A)
•
Low input capacitance
C
iss
= 3600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Built-in gate protection diode
•
Small and surface mount package (Power SOP8)
•
RoHS Compliant
6.0 ±0.3
4.4
+0.10
–0.05
1
4
5.37 MAX.
1.44
0.8
1.8 MAX.
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn
PACKING
Tape 2500 p/reel
PACKAGE
Power SOP8
0.08 g TYP.
μ
PA2741GR-E1-AT
μ
PA2741GR-E2-AT
Note
Note
Note
Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
35
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±25
V
Drain Current (DC)
I
D(DC)
±14
A
Note1
Drain Current (pulse)
±140
A
I
D(pulse)
Note2
Total Power Dissipation
1.1
W
P
T1
Note2
Total Power Dissipation (PW = 10 sec)
P
T2
2.5
W
Channel Temperature
T
ch
150
°C
−55
to
+150
°C
Storage Temperature
T
stg
Note3
Single Avalanche Current
14
A
I
AS
Note3
Single Avalanche Energy
19.6
mJ
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3.
Starting T
ch
= 25°C, V
DD
= 17.5 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V, L = 100
μ
H
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
Not all products and/or types are availabe in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18871EJ1V0PM00 (1st edition)
Date Published July 2007 NS
Printed in Japan
2007
μ
PA2741GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
= 35 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 7 A
V
GS
= 5 V, I
D
= 7 A
V
DS
= 10 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 17.5 V, I
D
= 7 A,
V
GS
= 10 V,
R
G
= 10
Ω
MIN.
TYP.
MAX.
1
±10
UNIT
μ
A
μ
A
V
S
1.0
8
5.6
3.0
Drain to Source On-state Resistance
7.0
12
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
3600
300
260
17
18
80
20
V
DD
= 17.5 V,
V
GS
= 5 V,
I
D
= 14 A
I
F
= 14 A, V
GS
= 0 V
I
F
= 14 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
28
9
9
0.8
30
21
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Preliminary Product Information G18871EJ1V0PM
μ
PA2741GR
•
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
•
No part of this document may be copied or reproduced in any form or by any means without the prior written consent
of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.
•
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rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC Electronics or others.
•
Descriptions of circuits, software and other related information in this document are provided for illustrative purposes
in semiconductor product operation and application examples. The incorporation of these circuits, software and
information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC
Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of
these circuits, software and information.
•
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products,
customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and
anti-failure features.
•
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The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated
"quality assurance program" for a specific application. The recommended applications of an NEC Electronics
product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC
Electronics products before using it in a particular application.
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visual equipment, home electronic appliances, machine tools, personal electronic equipment and
industrial robots.
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life
support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support
systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(Note)
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defined above).
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