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BTA204X-800E

Description
TRIAC, 800V V(DRM), 4A I(T)RMS,
CategoryAnalog mixed-signal IC    Trigger device   
File Size40KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BTA204X-800E Overview

TRIAC, 800V V(DRM), 4A I(T)RMS,

BTA204X-800E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Critical rise rate of minimum off-state voltage30 V/us
Maximum DC gate trigger current10 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current12 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.7 V
Maximum operating temperature125 °C
Maximum rms on-state current4 A
Off-state repetitive peak voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Base Number Matches1
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a plastic full pack envelope,
intended for use in motor control
circuits or with other highly inductive
loads. These devices balance the
requirements
of
commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic
level" D series are intended for
interfacing with low power drivers,
including micro controllers.
BTA204X series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA204X-
BTA204X-
BTA204X-
V
DRM
I
T(RMS)
I
TSM
Repetitive peak
off-state voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
500D
500E
500F
500
4
25
MAX.
600D
600E
600F
600
4
25
MAX. UNIT
-
800E
800F
800
4
25
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
hs
92 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
4
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
25
27
3.1
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
1
Rev 1.000

BTA204X-800E Related Products

BTA204X-800E BTA204X-500F
Description TRIAC, 800V V(DRM), 4A I(T)RMS, TRIAC, 500V V(DRM), 4A I(T)RMS,
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknown unknown
Critical rise rate of minimum off-state voltage 30 V/us 50 V/us
Maximum DC gate trigger current 10 mA 25 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 12 mA 30 mA
JESD-609 code e0 e0
Maximum leakage current 0.5 mA 0.5 mA
Maximum on-state voltage 1.7 V 1.7 V
Maximum operating temperature 125 °C 125 °C
Maximum rms on-state current 4 A 4 A
Off-state repetitive peak voltage 800 V 500 V
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Trigger device type TRIAC TRIAC
Base Number Matches 1 1
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S.H.E Analogue and Mixed Signal

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