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BT137S-600G

Description
TRIAC, 600V V(DRM), 8A I(T)RMS,
CategoryAnalog mixed-signal IC    Trigger device   
File Size41KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BT137S-600G Overview

TRIAC, 600V V(DRM), 8A I(T)RMS,

BT137S-600G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codenot_compliant
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current40 mA
Maximum leakage current0.5 mA
Humidity sensitivity level1
Maximum on-state voltage1.65 V
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum rms on-state current8 A
Off-state repetitive peak voltage600 V
surface mountYES
Trigger device typeTRIAC
Base Number Matches1
Philips Semiconductors
Product specification
Triacs
BT137S series
GENERAL DESCRIPTION
Passivated triacs in a plastic envelope,
suitable for surface mounting, intended
for use in applications requiring high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting, heating
and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT137S-
BT137S-
BT137S-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600
600F
600G
600
8
65
MAX.
800
800F
800G
800
8
65
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT428
PIN
1
2
3
tab
DESCRIPTION
MT1
MT2
gate
MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
102 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-600
600
1
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
MAX.
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
June 2001
1
Rev 1.400

BT137S-600G Related Products

BT137S-600G BT137S-800
Description TRIAC, 600V V(DRM), 8A I(T)RMS, TRIAC, 800V V(DRM), 8A I(T)RMS,
Is it Rohs certified? conform to incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code not_compliant unknown
Critical rise rate of minimum off-state voltage 200 V/us 100 V/us
Maximum DC gate trigger current 50 mA 35 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V
Maximum holding current 40 mA 20 mA
Maximum leakage current 0.5 mA 0.5 mA
Maximum on-state voltage 1.65 V 1.65 V
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Maximum rms on-state current 8 A 8 A
Off-state repetitive peak voltage 600 V 800 V
surface mount YES YES
Trigger device type TRIAC TRIAC
Base Number Matches 1 1
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