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BLF368

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size667KB,11 Pages
ManufacturerNorth American Philips Discrete Products Div
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BLF368 Parametric

Parameter NameAttribute value
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Maximum drain current (Abs) (ID)25 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)500 W
surface mountNO
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